EM128LXQAB313CS1T

Memory IC Overview

The EM128LXQAB313CS1T is a 128 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an Octal SPI interface operating at frequencies up to 200 MHz and is housed in a 24-BGA package. The device supports a supply voltage range of 1.65 V to 2 V with an organization of 16 M x 8. It operates within a temperature range of -40°C to +85°C and draws working power currents of 125 mA or 157 mA depending on the specific operational mode.

Memory IC Feature Summary

• Non-volatile memory architecture providing instant-on capability without initialization delays.
• Octal Serial Peripheral Interface (SPI) enabling high-speed data transfer rates up to 200 MHz.
• Designed for surface-mount technology (SMD/SMT) installation in compact electronic assemblies.

Memory IC Applications

• Industrial control systems requiring persistent data storage
• Automotive electronics applications demanding high reliability
• Embedded systems needing fast boot-up times

Memory IC Procurement Notes

Verify the exact suffix configuration against official Everspin documentation to ensure compatibility with specific thermal and electrical requirements. Confirm moisture sensitivity levels and recommended reflow profiles prior to assembly. Cross-reference the part number with current manufacturer datasheets to validate availability status and any recent design changes or obsolescence notices.

Memory IC Selection Notes

Select this component when non-volatile storage with high endurance and speed is required. The 128 Mbit capacity suits applications needing substantial persistent memory. Ensure the system voltage aligns with the 1.65 V to 2 V range. Consider the 24-BGA package constraints for PCB layout and thermal management during the design phase.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These components utilize spin-transfer torque magnetic tunnel junction technology. The series offers advantages over traditional flash memory, including unlimited write endurance and faster write speeds. The EM128LX variant specifically targets higher density applications within the low-voltage MRAM portfolio.

Memory IC Replacement Considerations

Consult official Everspin substitution guides for verified alternatives. Direct replacements must match the 128 Mbit capacity, Octal SPI interface, and 24-BGA package. Verify that any substitute maintains the same voltage and temperature specifications.