EM128LXQAB313IS2R

Memory IC Overview

The EM128LXQAB313IS2R is a magnetoresistive random-access memory (MRAM) device manufactured by Everspin Technologies. It features a storage capacity of 128 Mbit organized as 16 M x 8 bits. The component utilizes a Quad SPI interface and operates at a clock frequency of 133 MHz. It is housed in a 24-BGA package with surface mount installation. The device supports a supply voltage range from 1.65 V to 2 V. Operating temperatures are specified between -40°C and +85°C.

Memory IC Feature Summary

• Non-volatile data retention without power
• High-speed serial peripheral interface communication
• Industrial temperature range operation

Memory IC Applications

• Embedded system data logging
• Configuration storage in industrial controllers
• Firmware backup in embedded devices

Memory IC Procurement Notes

Verify the specific suffix IS2R against official datasheets to confirm the exact temperature grade and packaging configuration. Ensure compatibility with the 1.65V to 2V supply voltage requirements of the target circuit design. Confirm that the 24-BGA footprint matches the PCB layout specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when non-volatile memory with high endurance and fast write speeds is required. It serves as an alternative to traditional flash or EEPROM technologies where unlimited write cycles are necessary. Consider the 128 Mbit capacity and Quad SPI interface for applications demanding efficient data throughput in compact form factors.

Memory IC Part Context

This part belongs to the Everspin MRAM family, which integrates magnetic tunnel junction technology into standard CMOS processes. The series offers scalability across various densities and interfaces, providing reliable performance for demanding embedded applications requiring persistent storage capabilities.