EM128LXQADG13IS2R

Memory IC Overview

The EM128LXQADG13IS2R is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 128 Mbit organized as 16 M x 8 bits. The device utilizes a Quad SPI interface and operates at clock frequencies up to 133 MHz. Power supply requirements range from a minimum of 1.65 V to a maximum of 2 V. The component is housed in an 8-DFN package and supports surface mount installation. Operating temperature specifications cover a range from -40°C to +85°C.

Memory IC Feature Summary

• Non-volatile data retention utilizing spin-transfer torque MRAM technology
• Quad Serial Peripheral Interface (SPI) for high-speed data transfer
• Wide operating voltage range supporting low-power applications

Memory IC Applications

• Industrial control systems requiring non-volatile data logging
• Automotive electronics with standard commercial temperature ranges
• Consumer devices needing fast boot-up times and high endurance

Memory IC Procurement Notes

Verify the specific suffix 'S2R' against the manufacturer's official datasheet to confirm reel packaging and tape-and-reel specifications. Ensure compatibility with the required 1.65V to 2V power domain during system design validation. Confirm that the 8-DFN footprint matches the intended PCB layout constraints before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a non-volatile memory solution with unlimited write endurance is required. The Quad SPI interface offers higher throughput compared to standard SPI variants. Consider the 128 Mbit density and 16 M x 8 organization for applications needing large block storage without the latency associated with flash memory programming cycles.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These devices are designed to replace traditional EEPROM and Flash memories in applications demanding high speed, low power, and high reliability. The series emphasizes durability through infinite write cycle capabilities.

Memory IC FAQ

What is the write endurance of the EM128LXQADG13IS2R?

As a spin-transfer torque MRAM device, it offers unlimited write endurance, unlike flash or EEPROM technologies which have limited cycle counts.

Does this device require write delays typical of flash memory?

No, the MRAM technology allows for byte-level writes with no write delays, providing performance comparable to SRAM while maintaining non-volatility.