EM639165BM-5IH

Memory IC Overview

The EM639165BM-5IH is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 banks of 2M words by 16 bits. The device operates at a maximum clock frequency of 200 MHz with a cycle time of 4.5 ns. It utilizes a parallel interface and is housed in a 54-pin TFBGA package measuring 8x8 mm.

Memory IC Feature Summary

• High-speed CMOS technology for efficient data processing
• Four-bank architecture enabling concurrent operations
• Parallel interface supporting standard SDRAM protocols

Memory IC Applications

• Embedded systems requiring volatile memory storage
• Consumer electronics with parallel memory interfaces
• Industrial control units needing fast access times

Memory IC Procurement Notes

Verify the complete part number including suffixes to ensure correct speed grade and package type. Confirm RoHS compliance status if required for specific regulatory environments. Check manufacturer documentation for latest revision history to ensure compatibility with existing designs.

Memory IC Selection Notes

Select this component when a 128 Mbit capacity with 16-bit width is required. Ensure the system supports 200 MHz operation and 4.5 ns timing constraints. Verify that the 54-TFBGA footprint matches the PCB layout requirements.

Memory IC Part Context

This part belongs to the EM639165 series of SDRAMs from Etron Technology. It shares architectural similarities with other variants in the family, differing primarily in speed grades and packaging options such as TSOP or FBGA configurations.

Memory IC Replacement Considerations

Compatible substitutes include EM639165BM-6H and EM639165BM-6IH. These alternatives offer different timing specifications while maintaining the same pinout and functional configuration.