EM63A165BM-5IH

Memory IC Overview

The EM63A165BM-5IH is a high-performance CMOS Synchronous DRAM manufactured by Etron Technology, Inc. It provides a total storage density of 256Mb, organized internally as four banks of 4M words by 16 bits. The device utilizes a standard synchronous clock interface where all data and command signals are sampled on the rising edge of the clock signal to ensure precise timing control. It supports multiple programmable burst lengths and features automatic precharge capabilities.

Memory IC Feature Summary

• Supports high-speed operation with access times available in 4.5ns, 5ns, and 5.4ns specifications.
• Features a fully synchronous architecture with internal pipelining for reduced latency.
• Includes programmable mode registers for CAS latency, burst length, and transfer type configuration.

Memory IC Applications

• High-bandwidth memory systems
• Personal computer (PC) equipment
• High-frequency operation scenarios

Memory IC Procurement Notes

Verify the specific speed grade suffix against the required system clock frequency. Confirm that the package type matches the PCB footprint requirements. Ensure the voltage levels align with the target platform's power supply specifications before finalizing procurement.

Memory IC Selection Notes

Select this component when a 256Mb capacity with a 16-bit data width is required. Choose based on the necessary access time performance tier. Ensure the design accommodates the synchronous interface timing constraints and refresh requirements defined in the datasheet.

Memory IC Part Context

This part belongs to the EM63A165 series of Synchronous DRAMs from Etron Technology. The series includes variants with different speed grades and packaging options, such as the EM63A165TS-6G. All members share the same core 256Mb architecture and functional interface.

Memory IC Replacement Considerations

Compatible substitutes within the same family include the EM63A165TS-6G and EM63A165TS-7G. Verify pinout compatibility and electrical characteristics before substitution.