EM68B08CWAH-25H

Memory IC Overview

The EM68B08CWAH-25H is a Synchronous Dynamic Random Access Memory (SDRAM) component manufactured by Etron Technology, Inc. It belongs to the DDR2 memory family and features a parallel interface with a storage capacity of 512 Megabits organized as 64 Megawords by 8 bits. The device operates at a clock frequency of 400 MHz with an access time of 400 ps and a write cycle time of 15 ns. It requires a supply voltage between 1.7V and 1.9V and supports a commercial operating temperature range from 0°C to 85°C. The component is housed in a 60-pin Thin Fine-pitch Ball Grid Array (TFBGA) package measuring 8x10 mm.

Memory IC Feature Summary

• Supports high-speed data transfer via DDR2 synchronous architecture
• Provides compact surface-mount packaging for space-constrained designs
• Compatible with standard low-voltage power supplies

Memory IC Applications

• Portable consumer electronics requiring volatile memory
• Embedded systems utilizing parallel bus interfaces
• Industrial control units operating within commercial temperature ranges

Memory IC Procurement Notes

Verify the specific suffix 'AH' against official Etron Technology documentation to confirm exact thermal and mechanical specifications. Ensure compatibility with system voltage requirements of 1.7V to 1.9V. Confirm that the 60-TFBGA footprint matches the target PCB layout. Cross-reference the 400 MHz speed grade with system timing constraints before procurement.

Memory IC Selection Notes

Select this component when a 512Mb density is required in a small form factor. Compare performance metrics such as access time and power consumption against alternative DDR2 devices. Verify that the manufacturer's operating temperature range meets the environmental conditions of the final application. Check for pinout compatibility with existing reference designs.

Memory IC Part Context

This part is part of Etron Technology's DDR2 SDRAM portfolio. It serves as a functional equivalent to other 512Mb DDR2 chips in the market. The device is designed for applications needing reliable volatile storage with moderate speed capabilities. It complements the manufacturer's broader range of memory solutions for various electronic industries.

Memory IC Replacement Considerations

Publicly documented parameter-equivalent substitutes include the MT47H64M8SH-25E:H from Micron Technology and the IS43DR86400E-25DBL from Integrated Silicon Solution Inc. Verify electrical and physical compatibility before substitution.