EM6AA160TSE-4IG

Memory IC Overview

The EM6AA160TSE-4IG is a 256Mbit DDR SDRAM memory IC manufactured by Etron Technology, Inc. It features a parallel interface with a density of 32M x 16 bits. The component supports operation at frequencies up to 250 MHz and has a maximum access time of 700 ps. It is housed in a 66-pin TSOP II package.

Memory IC Feature Summary

• Supports four-bank page burst access mode
• Capable of auto-refresh and self-refresh operations
• Utilizes CMOS technology for synchronous data transfer

Memory IC Applications

• General-purpose volatile data storage
• Embedded systems requiring high-speed memory
• Consumer electronics with DDR SDRAM requirements

Memory IC Procurement Notes

Verify the specific suffix '4IG' against official Etron Technology documentation to confirm pinout and electrical characteristics match your design requirements. Ensure compatibility with the 66-TSOP II package dimensions and thermal specifications before integration into the final assembly.

Memory IC Selection Notes

Select this component when a 256Mbit capacity with a 16-bit width is required. The 250 MHz speed grade suits applications needing moderate-to-high bandwidth. Confirm that the system voltage and timing constraints align with the datasheet specifications for reliable operation.

Memory IC Part Context

This part belongs to the EM6AA series of DDR SDRAM devices from Etron Technology. It is designed as a drop-in replacement for similar industry-standard DDR memories, offering a balance of density and performance in a compact surface-mount package suitable for space-constrained electronic designs.

Memory IC Replacement Considerations

Check for direct substitutes within the same family, such as the EM6AA160TSE-4G, noting that suffix variations may indicate different packaging or environmental ratings rather than functional changes.