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EM6GE08EW9G-10H is listed in the Memory IC range at ChipApex. The manufacturer field lists Etron Technology, Inc.. Its product description is IC DRAM 4GBIT PARALLEL 78FBGA. Review the specifications below when checking this part for your BOM.
The EM6GE08EW9G-10H is a 4Gb parallel SDRAM component manufactured by Etron Technology, Inc. It utilizes DDR3 technology and operates with a clock frequency of 933 MHz. The device features an access time of 20 ns and a write cycle time of 15 ns. It is supplied in a 78-TFBGA package measuring 7.5x10.6 mm. The memory organization is 512M x 8 bits. Operating voltage ranges from 1.425V to 1.575V, and the industrial temperature range spans from -40°C to 95°C.
Verify the specific suffix '10IH' against official Etron Technology datasheets to confirm exact speed grade and industrial temperature rating compliance. Ensure packaging type matches project requirements, as variations exist between tape-and-reel and tray formats. Confirm RoHS3 status and moisture sensitivity level prior to assembly planning.
Select this component when a 4Gb density with parallel interface is required for DDR3 applications. Consider the 78-FBGA footprint for PCB layout constraints. Verify that the 1.5V nominal supply voltage aligns with system power rails. Ensure thermal management supports the specified 95°C junction temperature limit for industrial reliability.
This part belongs to the EM6GE08 series of DDR3 SDRAM devices from Etron Technology. It is designed to offer high bandwidth and low power consumption compared to previous generations. The industrial variant ensures stability across wider temperature ranges than commercial parts, making it suitable for demanding applications.
Consult official Etron Technology documentation for qualified pin-to-pin compatible alternatives within the same family. Cross-reference speed grades and package dimensions before substitution.
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