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EM6HE08EW9G-10IH is listed in the Memory IC range at ChipApex. The manufacturer field lists Etron Technology, Inc.. Its product description is IC DRAM 4GBIT PAR 78FBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for EM6HE08EW9G-10IH
- Description：IC DRAM 4GBIT PAR 78FBGA
- Series：-
- Mfr：Etron Technology, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Memory Type：Volatile
- Memory Format：DRAM
- Technology：SDRAM - DDR3L
- Memory Size：4Gbit
- Memory Organization：512M x 8
- Memory Interface：Parallel
- Clock Frequency：933 MHz
- Write Cycle Time - Word, Page：15ns
- Voltage - Supply：1.283V ~ 1.45V
- Operating Temperature：-40°C ~ 95°C (TC)
- Mounting Type：Surface Mount
- Package / Case：78-TFBGA
- Supplier Device Package：78-FBGA (7.5x10.6)
- Access Time：20 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for EM6HE08EW9G-10IH
Memory IC Overview
The EM6HE08EW9G-10IH is a 4Gbit DDR3L Synchronous DRAM manufactured by Etron Technology. It operates at a clock frequency of 933 MHz with a cycle time of 20 ns. The device utilizes a parallel interface and is housed in a 78-FBGA package measuring 7.5x10.6 mm. It supports an extended industrial temperature range from -40°C to +95°C, ensuring reliable performance in demanding environments.
Memory IC Feature Summary
- Supports low voltage operation for enhanced energy efficiency
- Designed for high-speed data processing applications
- Robust thermal stability for industrial-grade reliability
Memory IC Applications
- Industrial control systems
- Embedded computing platforms
- Automotive electronics
Memory IC Procurement Notes
Verify the specific suffix '10IH' against official Etron Technology documentation to confirm the exact speed grade and temperature rating. Ensure compatibility with system power requirements for DDR3L standards before integration. Cross-reference package dimensions with PCB layout specifications to prevent mechanical interference during assembly.
Memory IC Selection Notes
Select this component when a 4Gbit capacity with 933 MHz performance is required within an industrial temperature envelope. Consider the 78-FBGA footprint constraints and surface mount requirements. Evaluate system-level power budgets to leverage the DDR3L low-voltage characteristics effectively.
Memory IC Part Context
Etron Technology specializes in buffer memory and system-on-chip solutions. This part belongs to their DDR3L synchronous DRAM portfolio, designed for applications requiring high density and moderate speed within compact form factors. The company focuses on fabless semiconductor design for global markets.
Memory IC Replacement Considerations
Consult official substitution guides for compatible 4Gbit DDR3L devices in 78-FBGA packages. Verify pinout and electrical parameter alignment with alternative suppliers before implementation.
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