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EM6HE16EWXD-10H is listed in the Memory IC range at ChipApex. The manufacturer field lists Etron Technology, Inc.. Its product description is IC DRAM 4GBIT PAR 96FBGA. Review the specifications below when checking this part for your BOM.
The EM6HE16EWXD-10H is a 4Gbit SDRAM - DDR3 component manufactured by Etron Technology, Inc. It features a parallel memory interface with an organization of 256M x 16. The device operates at a clock frequency of 933 MHz, providing a write cycle time of 15ns and an access time of 20 ns. It requires a supply voltage between 1.425V and 1.575V. The unit is designed for surface mount installation in a 96-TFBGA package, specifically sized as 96-FBGA (9x13).
Verify the specific suffix codes against official manufacturer documentation to ensure correct package dimensions and temperature ratings. Confirm current product status, as availability may vary. Cross-reference pinouts and electrical specifications directly with the latest datasheet to prevent integration errors during design implementation.
Select this component when a 4Gbit capacity with 16-bit width is required. Ensure the system supports DDR3 signaling standards and provides the necessary voltage regulation between 1.425V and 1.575V. Verify that the PCB layout accommodates the 96-TFBGA footprint and meets the thermal dissipation requirements for the intended operating environment.
This part belongs to the EM6GE/EM6HE series of synchronous DRAMs from Etron Technology. These components are designed to replace older memory technologies in modern embedded applications. The series offers various speed grades and package options to suit different performance and form factor constraints in electronic devices.
Check for direct substitutes such as the EM6HD16EWBH-10H or other variants within the same family. Ensure compatibility regarding pin configuration, voltage levels, and timing parameters before swapping components in existing designs.
The device supports a clock frequency of up to 933 MHz.
The access time is specified as 20 ns.
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