EM6OE08NW9A-07H

Memory IC Overview

The EM6OE08NW9A-07H is a SDRAM - DDR4 memory IC manufactured by Etron Technology, Inc. It features a storage capacity of 4Gbit with a parallel interface and a clock frequency of 1.333 GHz. The component has an access time of 18 ns and is housed in a 78-FBGA (7.5x10.6) package.

Memory IC Feature Summary

• Supports DDR4 technology for high-speed data transfer
• Utilizes a parallel interface architecture
• Operates within standard surface mount configurations

Memory IC Applications

• General purpose volatile memory storage
• Embedded system data buffering
• Consumer electronics main memory modules

Memory IC Procurement Notes

Verify the specific suffix and package dimensions against the official datasheet to ensure compatibility with your PCB footprint. Confirm voltage requirements and temperature ratings match your design specifications before ordering. Check for RoHS compliance status if required by your manufacturing standards.

Memory IC Selection Notes

Select this component when a 4Gbit DDR4 density is required with a 78-pin FBGA form factor. Ensure the system supports 1.333 GHz operation and 18 ns latency. Compare pinout and electrical characteristics with existing designs to guarantee seamless integration without hardware modifications.

Memory IC Part Context

This part belongs to the EM6OE series of DDR4 DRAMs from Etron Technology. The series focuses on providing scalable memory solutions for modern electronic devices requiring efficient power consumption and high bandwidth performance within compact physical footprints.

Memory IC Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation. Verify electrical and mechanical compatibility carefully if considering alternative vendors or newer generation parts.