EMA11T2R

Overview

The EMA11T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates two independent PNP transistors within a compact SMD package, featuring built-in bias resistors to simplify circuit design. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 10mA/5V, a saturation voltage of 300mV at 250µA/5mA, and a base-emitter leakage current of 500nA. Typical internal resistor values are 4.7kΩ and 47kΩ.

Feature Summary

• Integrates two independent PNP transistor elements with embedded bias resistors to reduce external component count.
• Provides simplified switching and amplification functionality through pre-biased configuration.
• Designed for surface-mount assembly in space-constrained applications.

Applications

• General-purpose signal switching circuits
• Small-signal amplification stages
• Logic interface buffering

Procurement Notes

Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging format during sourcing. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Ensure the EMT6 package footprint matches the target PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component when a dual PNP pre-biased solution is required with moderate current handling capabilities. Compare hFE and saturation voltage specifications against load requirements. Verify that the integrated resistor values align with the driving logic levels and desired bias currents for the specific application environment.

Part Context

This part belongs to ROHM's series of digital transistors and pre-biased BJT arrays. These components are engineered to replace discrete resistor-transistor combinations, offering improved reliability and reduced board space. The EMA series specifically targets cost-sensitive consumer and industrial electronics requiring efficient small-signal processing.

Replacement Considerations

Direct substitutes must match the dual PNP configuration, 50V rating, and EMT6 package. Verify equivalent hFE and saturation voltage parameters. Cross-reference with other manufacturers' dual PNP pre-biased transistors ensuring pin compatibility and thermal performance alignment.