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The EMA2T2R is a dual pre-biased NPN/PNP digital transistor array manufactured by ROHM Semiconductor. It integrates two transistors with built-in biasing resistors in a compact EMT5 surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Key electrical parameters include a minimum DC current gain (hFE) of 68 at -5mA and -5V, a maximum transition frequency of 250MHz, and a power dissipation rating of 150mW. Typical base resistance values are 47kΩ.
Verify the specific ordering suffix to ensure correct taping specifications and reel quantities. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Cross-reference pinout diagrams with target PCB footprint to prevent installation errors during assembly processes.
Select this component when a dual NPN/PNP configuration is required in a minimal footprint. Compare hFE characteristics and saturation voltages against alternative arrays if specific gain linearity is critical. Consider the 150mW power dissipation limit when designing thermal management strategies for high-density boards. Verify that the 50V voltage rating exceeds the maximum operating voltage of the target application circuit.
The EMA2T2R belongs to ROHM's EMA2 series of complex digital transistors. This series is designed to replace multiple discrete components, including transistors and resistors, thereby saving board space and reducing assembly costs. The EMT5 package is part of ROHM's lineup of ultra-small surface-mount packages intended for portable and miniaturized electronic devices.
Direct substitutes may include other dual digital transistor arrays with compatible pinouts and electrical ratings. Verify equivalent hFE ranges, VCEO limits, and package dimensions before substitution. Consult manufacturer cross-reference lists for validated alternatives that maintain functional compatibility without redesigning the surrounding circuitry.