SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The EMA6DXV5T1G is a dual PNP digital transistor in the EMA series, housed in an SOT-553-5 surface-mount package. It features a common emitter configuration with integrated bias resistors. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device dissipates up to 230 mW and operates within a temperature range of -55°C to +150°C. Typical input resistance is 47 kOhms, with a resistor ratio of 1:0.47. Minimum DC current gain (hFE) is 160.
Verify component authenticity through authorized onsemi channels or certified distributors. Confirm RoHS compliance status via official Material Composition Declarations. Check current lifecycle status as manufacturing data indicates potential discontinuation. Validate package integrity and pinout alignment against the SOT-553-5 specification before integration into production workflows.
Select this component when dual PNP switching with integrated biasing is required. Ensure the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the SOT-553-5 footprint constraints. Verify thermal management requirements against the 230 mW power dissipation limit. Compare hFE minimums if gain consistency is critical for the specific application logic levels.
This part belongs to the EMA series of pre-biased bipolar junction transistors from onsemi. These devices combine transistors and resistors to reduce component count. The EMA6DXV5T1G specifically addresses dual PNP needs in compact form factors. It serves as a discrete solution for logic interfacing where space efficiency and simplified biasing networks are prioritized over complex analog performance.
Public records indicate the EMA6DXV5T1G is discontinued. No verified public substitute part numbers are available in the provided documentation. Engineers must consult onsemi directly for current equivalent recommendations or alternative sourcing strategies.