EMA6DXV5T1G

EMA6DXV5T1G

$0.36
  • Description:TRANS 2PNP PREBIAS 0.23W SOT553
  • Series:-

SKU:6a16379ad40a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.23W SOT553
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:SOT-553

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EMA6DXV5T1G

Overview

The EMA6DXV5T1G is a dual PNP digital transistor from onsemi, housed in an SOT-553-5 surface-mount package. It integrates two common-emitter configured transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a power dissipation rating of 230 mW. It operates within a temperature range of -55°C to +150°C and has a minimum DC current gain (hFE) of 160.

Feature Summary

  • Integrates dual PNP transistors with monolithic bias resistor networks to replace discrete components
  • Utilizes compact SOT-553-5 packaging for space-constrained surface-mount applications
  • Simplifies circuit design by eliminating external base resistors and reducing component count

Applications

  • Low-power surface mount circuits requiring compact form factors
  • General-purpose switching applications utilizing integrated biasing
  • Digital logic interface circuits replacing discrete transistor-resistor combinations

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation before integration. Check for obsolescence notices or alternative sourcing options as availability may be limited. Ensure storage conditions meet specified temperature ranges to maintain device integrity during handling and assembly processes.

Selection Notes

Select this component for designs requiring dual PNP switching with integrated biasing in small packages. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit requirements. Consider the 47 kOhm input resistance for base drive calculations. Evaluate thermal performance against the 230 mW dissipation limit in the target application environment.

Part Context

This part belongs to the EMA series of digital transistors manufactured by onsemi. It is categorized under bipolar junction transistors and specifically designed as a complementary pair solution. The SOT-553-5 package is standard for low-power dual transistor applications in modern electronics manufacturing.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer documentation for direct replacements or evaluate similar dual PNP digital transistors in SOT-553 packages with matching electrical specifications.

EMA6DXV5T1GEMA6DXV5T1G
$0.36
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