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The EMA6DXV5T1G is a dual PNP digital transistor from onsemi, housed in an SOT-553-5 surface-mount package. It integrates two common-emitter configured transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a power dissipation rating of 230 mW. It operates within a temperature range of -55°C to +150°C and has a minimum DC current gain (hFE) of 160.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation before integration. Check for obsolescence notices or alternative sourcing options as availability may be limited. Ensure storage conditions meet specified temperature ranges to maintain device integrity during handling and assembly processes.
Select this component for designs requiring dual PNP switching with integrated biasing in small packages. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit requirements. Consider the 47 kOhm input resistance for base drive calculations. Evaluate thermal performance against the 230 mW dissipation limit in the target application environment.
This part belongs to the EMA series of digital transistors manufactured by onsemi. It is categorized under bipolar junction transistors and specifically designed as a complementary pair solution. The SOT-553-5 package is standard for low-power dual transistor applications in modern electronics manufacturing.
Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer documentation for direct replacements or evaluate similar dual PNP digital transistors in SOT-553 packages with matching electrical specifications.