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The EMA6DXV5T5G is a dual PNP silicon surface mount transistor featuring a monolithic bias resistor network. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device dissipates 230 mW of power within an SOT-553-5 package. Typical input resistance is 47 kOhms with a ratio of 1. Minimum DC current gain (hFE) is 80. Operating temperature ranges from -55 C to +150 C.
Verify component authenticity through authorized onsemi distributors or certified partners. Confirm datasheet revision and RoHS compliance status prior to integration. Check for obsolescence notices as the product lifecycle status may indicate end-of-life conditions. Ensure storage and handling procedures meet moisture sensitivity level requirements for surface mount devices.
Select this component when a dual PNP digital transistor with integrated biasing is required. Compare electrical parameters such as VCEO, IC, and hFE against circuit requirements. Consider the SOT-553 footprint constraints and thermal dissipation limits. Evaluate alternative part numbers within the same series if pin compatibility or specific gain characteristics differ.
This device belongs to the BRT (Bias Resistor Transistor) family designed to simplify analog and digital circuit layouts. It consolidates two transistors and their associated biasing resistors into a single small outline package. This integration reduces board space and assembly complexity compared to using discrete bipolar junction transistors and external resistors.
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official manufacturer channels before considering alternatives.