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The EMA7T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two integrated PNP transistors with built-in bias resistors. It utilizes an SOT-553-5 surface-mount package for compact circuit integration. The device supports a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Key electrical parameters include a typical input resistance of 4.7 kOhms, a minimum DC current gain (hFE) of 100 at -1 mA and -5 V, and a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging configuration for automated assembly processes. Confirm that the SOT-553-5 footprint matches the target PCB layout dimensions. Ensure design margins account for the -50 V collector-emitter voltage rating under all operational conditions. Cross-reference the datasheet revision date to validate parameter consistency against current production batches.
Select this component when a compact solution for dual PNP switching is required without external base resistors. The integrated resistor network simplifies schematic design and reduces board space compared to discrete BJT arrangements. Consider the 250 MHz frequency limit for high-speed digital applications. Evaluate the 150 mW power dissipation capability relative to the expected thermal environment and duty cycle of the switching operation.
This part belongs to ROHM's digital transistor series, designed to replace multiple discrete components. It consolidates amplification and biasing functions into a single small-outline package. The product line targets applications demanding simplified bill-of-materials and improved reliability through reduced solder joints. It serves as a standard solution for general-purpose digital switching tasks in modern electronic assemblies.
Public confirmed substitute part numbers are not available in the provided documentation.