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The EMB10T2R is a dual PNP digital transistor from ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It features integrated base resistors with a typical value of 10 kOhms and a resistance ratio of 1. The device supports a collector continuous current of -100 mA and a maximum operating frequency of 250 MHz. Key electrical ratings include a collector-emitter voltage (VCEO) of -50 V, an emitter-base voltage (VEBO) of -3 V, and a power dissipation (Pd) of 150 mW. The minimum DC current gain (hfe) is specified as 30 at -5 mA and -5 V.
Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging configuration when ordering. Confirm that the -50 V voltage rating and -100 mA current limits align with the target application's worst-case conditions. Ensure compatibility with the SOT-563-6 footprint during PCB layout review. Check RoHS compliance status through official manufacturer documentation prior to final procurement.
Select this component for designs requiring dual PNP switching with integrated base resistors. The 10 kOhm input resistor value suits standard logic drive levels. Consider the 150 mW power dissipation limit for thermal management in dense layouts. Compare against NPN alternatives like EMH10T2R if positive logic switching is preferred instead of negative polarity requirements.
This part belongs to the EMB10 series of complex digital transistors manufactured by ROHM Semiconductor. It is categorized under bipolar transistor arrays and pre-biased devices. The SOT-563-6 package is shared across various ROHM transistor families, including NPN variants and MOSFET combinations, ensuring standardized footprint compatibility within multi-component designs.
The typical input resistor value is 10 kOhms.
The device supports a maximum operating frequency of 250 MHz.