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The EMB11FHAT2R is a dual pre-biased PNP transistor array manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates two PNP bipolar junction transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device features a transition frequency of 250 MHz and a power dissipation capacity of 150 mW. Each transistor includes a base resistor of 10 kΩ and an emitter resistor of 10 kΩ. It meets AEC-Q101 automotive qualification standards and operates within a temperature range of -55°C to +150°C.
Verify the current lifecycle status before procurement, as this component may be marked as Not Recommended for New Designs (NRND). Confirm that the SOT-563 footprint matches the target PCB layout. Ensure supply chain sources provide valid traceability documentation for automotive-grade parts. Check for alternative lead times if standard reels are unavailable due to production constraints.
Select this component when a compact dual PNP solution with integrated biasing is required for automotive or industrial environments. Compare the 10 kΩ internal resistor values against specific base drive requirements. Evaluate the 150 mW power dissipation limit against thermal management capabilities. Consider the 250 MHz bandwidth for high-frequency signal processing needs.
This part belongs to ROHM's EMB series of digital transistors, which are designed to replace multiple discrete components. The EMT6 package variant offers a small form factor suitable for dense board layouts. As an automotive-qualified device, it aligns with ROHM's portfolio of reliable semiconductor solutions for harsh operating conditions.
Check for direct pin-compatible alternatives within the same EMB series family. Verify that any substitute maintains the same PNP configuration, 10 kΩ resistor values, and AEC-Q101 certification. Ensure the replacement package matches the SOT-563 footprint to avoid re-splicing.