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The EMB11T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It features built-in biasing resistors with a typical input resistance of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of -30 V and a continuous collector current of -100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 30 at -5 mA and -5 V, and a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify the specific ordering suffix to confirm the tape and reel quantity, as standard factory packaging may vary. Confirm RoHS compliance status through the official datasheet before integration. Ensure the SOT-563-6 footprint matches the target PCB layout. Check for automotive qualification if the application requires AEC-Q101 standards, as this variant may differ from standard industrial grades.
Select this component when a dual PNP digital transistor with 10 kOhm base resistors is required. Compare against the EMP11T2R if diode functionality is needed instead of transistor amplification. Consider the EMB11FHAT2R for automotive-grade requirements. Verify that the -100 mA current rating meets the load requirements and that the SOT-563-6 thermal dissipation is sufficient for the operating environment.
This part belongs to the EMB11 series of digital transistors from ROHM Semiconductor. It shares the SOT-563-6 package form factor with other devices in the family, such as the EMB2T2R and EMP11T2R. The series is designed for high-density mounting and offers integrated biasing to reduce external component count compared to discrete BJT solutions.
The EMB11FHAT2R is a confirmed automotive-grade alternative within the same series. Direct functional substitutes with identical pinouts and specifications should be verified against the official ROHM cross-reference list.