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The EMB18T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates two PNP transistors with built-in bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Key electrical parameters include a typical input resistance of 47 kOhms per channel, a DC current gain (hFE) minimum of 68 at -5 mA and -5 V, and a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, with a maximum junction temperature of +150°C.
Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging configuration when sourcing from distributors. Confirm RoHS compliance status through the official datasheet or manufacturer certification documents prior to final procurement decisions. Ensure the ordering part number matches the exact electrical specifications required for the target application design.
Select this component when a dual PNP configuration with integrated base resistors is required to save board space. Compare the 47 kOhm input resistance against other variants like EMB11T2R if different drive currents are needed. Verify that the -50 V voltage rating and -100 mA current limit meet the load requirements of the specific circuit design.
The EMB18T2R belongs to ROHM's EMB series of dual digital transistors. This series provides integrated resistor networks to replace discrete transistor and resistor combinations. The EMB18 variant specifically offers a 47 kOhm input resistance, distinguishing it from other series members with different resistance ratios.
Direct substitutes within the same family include EMB11T2R and EMB59T2R, which share the SOT-563-6 package but differ in input resistance values. Cross-manufacturer equivalents should be verified for pin compatibility and electrical parameter alignment.