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The EMB2FHAT2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two PNP bipolar junction transistors with built-in bias resistors. It is housed in an SOT-563 (EMT6) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. Key electrical parameters include a DC current gain (hFE) ranging from 100 to 600, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. It is qualified under AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix and packaging configuration directly with authorized distributors or the manufacturer. Confirm that the component meets all required automotive quality standards and environmental compliance specifications before finalizing procurement plans.
Select this component when a dual PNP digital transistor solution is required for automotive or industrial applications. Ensure the input resistance values and current gain characteristics align with the target circuit's drive requirements and voltage levels.
This part belongs to ROHM's series of digital transistors designed for replacing discrete resistor-transistor combinations. It offers a compact footprint and simplified layout compared to individual components, enhancing reliability in high-density PCB designs.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementing any substitute components in existing designs.