EMB2T2R

EMB2T2R

$0.45
  • Description:TRANS 2PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:f0326f44afe2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMB2T2R

Overview

The EMB2T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-563-6 surface-mount package. It integrates two PNP transistors with typical base resistors of 47 kΩ each, configured for efficient switching applications. The device supports a collector-emitter voltage (VCEO) of -30 V and a continuous collector current of -100 mA, with a power dissipation rating of 150 mW. It features a minimum DC current gain (hFE) of 68 at -5 mA and -5 V, and operates up to a maximum frequency of 250 MHz. The component is designed for high-density PCB layouts and offers a junction temperature range suitable for standard industrial environments.

Feature Summary

  • Dual PNP configuration within a single SOT-563-6 package for space-saving circuit design
  • Integrated 47 kΩ base resistors simplify driver interface requirements
  • High-speed switching capability with a maximum operating frequency of 250 MHz
  • Low saturation voltage characteristics for improved efficiency in logic circuits

Applications

  • General-purpose logic level shifting and buffering
  • Driver circuits for small-signal relays and LEDs
  • Interface modules between microcontrollers and peripheral devices
  • Switching applications in portable battery-powered equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as supply chain conditions may vary. Ensure that the procurement documentation matches the exact part number EMB2T2R to avoid substitution errors in production lines.

Selection Notes

Select this component when a dual PNP digital transistor solution is required in a minimal footprint. The 47 kΩ internal resistance is suitable for standard TTL and CMOS logic interfaces. Consider the 150 mW power dissipation limit and thermal management requirements for dense PCB assemblies. Verify that the -30 V collector-emitter voltage meets the circuit's maximum operating voltage constraints.

Part Context

The EMB2T2R belongs to ROHM's series of embedded resistor digital transistors, designed to replace discrete transistor networks. It simplifies schematic design by integrating biasing resistors directly with the transistor die. This integration reduces component count, saves board space, and improves reliability by minimizing solder joints compared to discrete solutions.

Replacement Considerations

Check for direct pin-compatible substitutes such as other dual PNP digital transistors in SOT-563 packages from ROHM or other manufacturers. Ensure that replacement parts match the electrical parameters, specifically the hFE gain, base resistance values, and voltage ratings. Verify that any alternative component maintains the same package dimensions and thermal characteristics.

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