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The EMB3FHAT2R is a dual digital transistor (bias resistor built-in transistor) manufactured by ROHM Semiconductor. It integrates two PNP transistors with bias resistors in a compact SOT-563-6 surface-mount package. The device supports a maximum collector current of 100 mA and offers a collector-emitter voltage rating of 50 V. Key electrical parameters include a DC current gain (hFE) ranging from 100 to 600, a transition frequency (fT) of 250 MHz, and a power dissipation capacity of 150 mW. It is qualified under AEC-Q101 standards for automotive applications and operates at temperatures up to +150°C.
Verify the NRND status before procurement, as this component is not recommended for new designs. Confirm that existing inventory meets project timelines. Ensure compatibility with SOT-563-6 footprints during integration planning. Check for alternative sourcing options if long-term supply assurance is required for production runs.
Select this component when a dual PNP configuration with integrated biasing is required in a small form factor. The 50 V rating and 100 mA current capability suit low-power switching tasks. Consider the 250 MHz transition frequency for moderate-speed digital applications. Verify that the AEC-Q101 qualification aligns with specific automotive reliability requirements.
This part belongs to ROHM's series of pre-biased transistors designed to replace discrete resistor-transistor combinations. It simplifies PCB layout by reducing component count. The SOT-563 package allows for high-density mounting. As a dual unit, it provides matched characteristics for differential or parallel configurations.
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameter alignment. Ensure the replacement maintains AEC-Q101 qualification if used in automotive contexts.