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The EMB3T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 (EMT6) surface-mount package. It integrates two PNP transistors with built-in bias resistors, featuring a typical input resistance of 47 kΩ and a resistor ratio of 1. The device supports a maximum collector current of -100 mA and a collector-emitter voltage (VCEO) of -50 V, with a power dissipation rating of 150 mW. It operates at frequencies up to 250 MHz and maintains a minimum DC current gain (hFE) of 68 at -5 mA and -5 V.
Verify the specific suffix 'T2R' corresponds to the reel packaging format when ordering from distributors. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration into regulated products. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component when a dual PNP solution with fixed 47 kΩ base resistors is required. Compare against similar models like EMB11T2R if different resistance values are needed. Verify that the -50 V voltage rating and -100 mA current limit meet the target circuit requirements before finalizing the design.
This part belongs to ROHM's EMB series of pre-biased transistors, designed to replace multiple discrete components. The EMT6 package allows for high-density PCB layouts. It serves as a compact alternative to using separate transistors and resistors, reducing board space and assembly complexity in consumer and industrial electronics.
Check for direct pin-compatible substitutes within the same EMB family, such as variants with different resistor ratios. Verify electrical parameters match exactly if substituting with parts from other manufacturers.