EMB51T2R

EMB51T2R

$0.32
  • Description:TRANS 2PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:9f0d80cd68d7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):30mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMB51T2R

Overview

The EMB51T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two PNP transistors with built-in bias resistors in an SOT-563 (EMT6) surface-mount package. It operates with a collector-emitter voltage of -50V and a continuous collector current of -30mA. The device includes typical base and emitter resistors of 22 kOhms each, maintaining a resistor ratio of 1. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at -5 mA and -10 V, a maximum transition frequency of 250 MHz, and a power dissipation rating of 150 mW. The component supports a maximum operating temperature of +150°C.

Feature Summary

  • Integrates dual PNP transistors with pre-biased resistors to simplify circuit design
  • Provides high-speed switching capability with a 250 MHz transition frequency
  • Offers compact footprint through the six-terminal SOT-563 surface-mount package

Applications

  • General-purpose switching circuits requiring dual PNP logic interfaces
  • Driver stages for low-current loads in consumer electronics
  • Level shifting applications between different voltage domains

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, such as reel or cut tape options, before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary. Ensure the selected variant matches the required SOT-563 pinout and thermal specifications for the target application environment.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required to reduce board space and external components. Compare the 22 kOhm input resistance against other variants like EMB52T2R if higher impedance is needed. Ensure the -50V voltage rating and -30mA current limit align with the load requirements, considering the 150 mW power dissipation constraint.

Part Context

The EMB51T2R belongs to ROHM's series of dual digital transistors designed for replacing multiple discrete components. It serves as a compact alternative to separate NPN/PNP pairs with external resistors. The part shares the EMT6 package form factor with other devices in the family, facilitating standardized PCB layouts for multi-transistor applications.

Replacement Considerations

EMB52T2R offers a similar dual PNP configuration but features 47 kOhm bias resistors instead of 22 kOhm.

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