EMB52T2R

EMB52T2R

$0.29
  • Description:PNP+PNP DIGITAL TRANSISTOR (WITH
  • Series:-

SKU:7feceb2ba3bc Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP+PNP DIGITAL TRANSISTOR (WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMB52T2R

Overview

The EMB52T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two PNP transistors integrated with bias resistors in an SOT-563 (EMT6) surface-mount package. It operates with a maximum collector-emitter voltage of -150 mV and a continuous collector current of -100 mA. The device has a typical input resistance of 47 kOhms and a minimum DC current gain of 80 at -5 mA and -10 V. It supports a maximum operating frequency of 250 MHz and dissipates up to 150 mW of power. The component functions within a temperature range up to +150 C and includes an emitter-base voltage rating of -3 V.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors for simplified circuit design
  • Provides high-speed switching capability with a maximum operating frequency of 250 MHz
  • Offers compact surface-mount packaging suitable for space-constrained applications

Applications

  • General-purpose switching circuits requiring dual PNP configuration
  • Driver stages for logic interfaces and signal conditioning
  • Biasing networks in analog signal processing systems

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official ROHM documentation to ensure correct component identification. Confirm RoHS compliance status and datasheet revisions prior to procurement. Ensure supply chain sources provide authentic components matching the specified electrical parameters and package type.

Selection Notes

Select this component when a dual PNP digital transistor with integrated bias resistors is required. Consider the -150 mV collector-emitter voltage limit and -100 mA current capacity during design. Evaluate the 47 kOhm input resistance for compatibility with driving source impedance. Verify that the SOT-563 package fits the available PCB real estate and thermal requirements.

Part Context

The EMB52T2R belongs to ROHM's series of Bias Resistor Built-in Transistors (BRTs). These devices combine transistors and resistors to reduce board space and simplify assembly. The EMT6 package variant provides a compact footprint for dual-channel applications. This series is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.

Replacement Considerations

Check for compatible dual PNP BRTs in the SOT-563 package from other manufacturers. Verify equivalent electrical parameters such as voltage ratings, current capacity, and input resistance. Ensure pinout compatibility if direct replacement is intended without schematic modification.

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