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The EMB59T2R is a dual pre-biased PNP digital transistor array manufactured by ROHM Semiconductor. It integrates two PNP transistors with built-in bias resistors in an SOT-563 (EMT6) surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a typical base input resistance of 10kΩ and an emitter-base resistance of 47kΩ, resulting in a resistor ratio of 4.7. It operates within a junction temperature range up to +150°C and dissipates up to 150mW of power.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the component marking code with the official documentation to prevent counterfeit substitution during assembly.
Select this component when a dual PNP configuration with integrated biasing is required. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the 10kΩ base resistance aligns with the driving source impedance and desired switching speed characteristics for the target application.
This part belongs to the EMB series of digital transistors from ROHM Semiconductor. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The EMT6 package provides a standardized footprint compatible with automated pick-and-place manufacturing processes.
The EMH59T2R is a documented alternative offering identical pinout and electrical characteristics but utilizing NPN polarity instead of PNP.