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The EMB6T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 (EMT6) surface-mount package. It integrates two PNP transistors with typical input resistors of 4.7 kOhms and a resistor ratio of 1. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -50 V, continuous collector current of -100 mA, and DC current gain (hfe) of at least 100 at -1 mA and -5 V. The device supports a maximum operating frequency of 250 MHz, dissipates up to 150 mW of power, and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'T2R' against the official ROHM datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure that the ordering part number matches the exact pin configuration and electrical characteristics required for the target application. Cross-reference the manufacturer's latest documentation to confirm compliance with RoHS standards and environmental regulations before finalizing procurement.
Select this component when a dual PNP digital transistor solution is required for space-constrained designs. The integrated biasing resistors reduce external component count compared to discrete BJT configurations. Consider the 4.7 kOhm input resistance and -50 V voltage rating to ensure compatibility with the driving logic levels and load requirements of the specific system architecture.
The EMB6T2R belongs to ROHM's family of pre-biased transistors, which combine bipolar junction transistors with internal resistors to simplify circuit layout. These components are categorized under digital transistors and are designed to replace multiple discrete components. The SOT-563-6 package allows for high-density mounting on printed circuit boards, supporting automated assembly processes in modern electronics manufacturing.
Public confirmed substitute part numbers: None.