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The EMB75T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates bias resistors with a typical input resistance of 4.7 kOhms and a resistor ratio of 10. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -150 mV, continuous collector current of -100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hfe) of 80 at -5 mA and -10 V, operates up to 250 MHz, and supports temperatures from -55 C to +150 C.
Verify the specific suffix 'T2R' against official ROHM documentation to confirm reel quantity and tape specifications. Ensure compatibility with SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before procurement.
Select this component when a dual PNP digital transistor with integrated biasing is required. The 4.7 kOhm input resistance suits standard logic levels. Verify that the -150 mV VCEO rating meets the circuit's voltage requirements, as this value appears unusually low for general switching and may indicate a specific low-voltage application or data entry anomaly requiring datasheet confirmation.
The EMB75T2R belongs to ROHM's digital transistor family, which combines transistors with pre-biased resistors. This integration reduces component count and board space compared to discrete resistor-transistor combinations. The dual PNP configuration allows for complementary switching or push-pull arrangements within a single package.
Check for EMH75T2R if NPN polarity is acceptable. Verify pinout compatibility with SOT-563 packages. Consult ROHM's official substitution guide for electrically equivalent dual PNP digital transistors with similar hfe and VCEO ratings.