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The EMB9T2R is a dual PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates two PNP transistors with bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. The device features a typical input resistance (R1) of 10 kΩ and a resistor ratio of 1. It operates up to a maximum frequency of 250 MHz with a power dissipation (Pd) of 150 mW and a maximum operating temperature of +150°C.
Verify the specific suffix 'T2R' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure component authenticity by sourcing from authorized distributors and checking for original markings on the SOT-563-6 package.
Select this component for designs requiring dual PNP switching with integrated base resistors. Compare input resistance values against logic output capabilities to ensure proper drive levels. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements of the target application circuit.
This part belongs to ROHM's series of bias resistor built-in transistors (DTRs). These components replace discrete transistor-resistor networks, reducing component count and assembly time. The EMB9T2R specifically addresses applications needing dual PNP configurations in a small footprint, commonly used in consumer electronics and industrial control boards.
Cross-reference with other ROHM dual PNP digital transistors such as EMB11T2R or EMB59T2R if different input resistance ratios are required. Verify pinout compatibility with the SOT-563-6 package before substituting. Check equivalent parts from other manufacturers only if electrical parameters match exactly.