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The EMC2DXV5T1 is a dual pre-biased transistor array manufactured by onsemi, housed in an SOT-553 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor within a single compact footprint. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. Each transistor includes integrated base and emitter resistors, both specified at 22 kOhms, to simplify circuit design. The unit offers a DC current gain (hFE) minimum of 60 at 5 mA and 10 V, with a maximum power dissipation of 500 mW. It operates within a temperature range of -55°C to +150°C.
Verify component status carefully as this part is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure that any replacement components maintain compatible pinouts and electrical specifications to guarantee system reliability without redesign.
Select this component when a compact solution for complementary switching is required. The integrated resistor values reduce board space and assembly complexity. Verify that the 50 V rating and 100 mA current capacity meet the specific load requirements of the target application before finalizing the design.
This device belongs to the EMCxDXV5T1 series of digital transistors from onsemi. These parts are designed to replace multiple discrete components, reducing PCB area and manufacturing costs. The SOT-553 package allows for high-density mounting in portable and consumer electronics where space constraints are critical.
Public confirmed substitute part numbers are not available in the provided documentation.