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The EMC4DXV5T1G is a dual pre-biased transistor array manufactured by onsemi, housed in an SOT-553 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with monolithic biasing networks. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA per transistor. Total power dissipation is rated at 500 mW. Typical base resistance values are 22 kΩ for both the NPN and PNP channels, facilitating direct interface with digital logic outputs without external resistors.
Verify the specific suffix 'T1G' against official manufacturer documentation to confirm tape-and-reel packaging and RoHS compliance status. Confirm availability through authorized distributors as this component may be subject to lifecycle changes or discontinuation notices. Cross-reference the Mouser part number 863-EMC4DXV5T1G for current distribution status and datasheet revisions.
Select this component when a single package must provide both NPN and PNP switching functions with integrated biasing. The 50 V rating and 100 mA current capacity suit low-voltage digital control loops. Ensure the 22 kΩ internal base resistance aligns with the driving logic's output current capabilities to maintain proper saturation levels during operation.
This device belongs to the EMCxDXV5T1G series of dual pre-biased transistor arrays from onsemi. These components are designed to simplify biasing networks in digital circuits. The SOT-553 package allows for high-density mounting. This specific part combines complementary transistor types within a single footprint to reduce assembly complexity.
Publicly confirmed substitute part numbers for EMC4DXV5T1G were not identified in the provided reference material. Verify compatibility with alternative dual BRT arrays such as the EMC2DXV5T1 if pinout and electrical characteristics match the design requirements.