EMC5DXV5T1G

Overview

The EMC5DXV5T1G is a dual bias resistor transistor manufactured by onsemi, integrating one NPN and one PNP silicon transistor with monolithic bias resistor networks in a surface-mount package. It operates with a collector-emitter voltage of 50 V and a maximum collector current of 100 mA per element. The device dissipates up to 500 mW of power and functions within a temperature range of -55°C to +150°C junction temperature. Key electrical characteristics include a DC current gain (hFE) of at least 60 at 5 mA and 10 V, with a saturation voltage of 250 mV maximum at 300 µA base current and 10 mA collector current. Both integrated base resistors are specified at 22 kΩ.

Feature Summary

• Integrates complementary NPN and PNP transistors with pre-biased resistor networks for simplified circuit design.
• Provides high-density packaging solution suitable for space-constrained surface-mount applications.
• Features robust thermal performance allowing operation up to 150°C junction temperature.

Applications

• Switching circuits requiring complementary logic inversion or level shifting.
• Driver stages for low-power loads where bias network integration reduces component count.
• Digital interface buffering in portable electronic devices.

Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance and halogen-free status as per onsemi standards. Confirm the package marking code matches the SC-88AB or SOT-363 variant specified in the official datasheet to ensure correct pinout alignment during assembly. Cross-reference the manufacturer part number against the latest procurement lists to avoid obsolete stock.

Selection Notes

Select this component when a single package must provide both NPN and PNP switching capabilities with fixed biasing. Ensure the required base resistance value of 22 kΩ aligns with the target drive current and switching speed requirements. Verify that the 50 V breakdown voltage exceeds the maximum operating voltage of the application circuit to prevent device failure under transient conditions.

Part Context

This device belongs to the EMCxDXV5T1 series of dual bias resistor transistors from onsemi. These components are designed to replace discrete transistor-resistor combinations, reducing board space and assembly time. The series typically includes variations with different resistor values and transistor configurations to suit diverse analog and digital switching needs.

Replacement Considerations

Direct substitutes may include other dual BRTs with matching NPN/PNP configurations and similar 22 kΩ bias resistors. Verify pin compatibility and thermal characteristics before substitution. Alternative packages such as SOT-363 equivalents should be evaluated for mechanical fit and electrical equivalence.