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The EMD12T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It integrates one NPN and one PNP transistor within an EMT6 surface-mount package, which corresponds to the SOT-563 or SOT-666 footprint. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain (hFE) of 68 at 5mA and 5V, with a maximum saturation voltage of 300mV at 10mA input and 500µA output. The unit features a transition frequency of 250MHz, a maximum power dissipation of 150mW, and integrated base and emitter resistors of 47kΩ each.
Verify the specific ordering suffix to confirm packaging format, such as tape and reel quantities. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the component designation matches the exact EMD12T2R specification sheet to avoid confusion with similar pre-biased arrays.
Select this component when a matched NPN/PNP pair with fixed biasing is required. The 47kΩ internal resistors suit applications needing moderate drive currents. Verify that the 50V voltage rating and 100mA current limit align with the target circuit requirements before finalizing the design.
This part belongs to Rohm's series of complex digital transistors designed to replace discrete resistor-transistor networks. The EMT6 package allows for automated mounting using standard pick-and-place equipment, facilitating high-volume manufacturing processes while maintaining consistent electrical performance across production batches.
Check for direct equivalents from other manufacturers offering identical pinouts and electrical characteristics. Verify that substitute parts maintain the same 47kΩ resistor values and hFE specifications to ensure circuit compatibility without redesign.