EMD22FHAT2R

Overview

The EMD22FHAT2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It integrates one NPN and one PNP transistor within an EMT6 surface-mount package, equivalent to SOT-563 or SOT-666. The device features built-in base resistors: R1 is 4.7 kΩ and R2 is 47 kΩ. Key electrical parameters include a maximum collector current of 100 mA, a transition frequency of 250 MHz, and a maximum power dissipation of 150 mW. The saturation voltage is specified at 300 mV under conditions of 250 µA base current and 5 mA collector current. The DC current gain is minimum 80 at 10 mA collector current and 5 V collector-emitter voltage. This component holds AEC-Q101 automotive qualification.

Feature Summary

• Dual configuration combining one NPN and one PNP pre-biased transistor in a single compact package.
• Integrated base resistors simplify circuit design by reducing external component count.
• Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment operation.

Applications

• Automotive electronic control units requiring signal switching or level translation.
• General-purpose logic interface circuits utilizing pre-biased transistors.
• Low-power switching applications in consumer electronics with space constraints.

Procurement Notes

Verify the specific ordering suffix when sourcing, as variants such as EMD22FHAT2RTR (Tape & Reel), EMD22FHAT2RCT (Cut Tape), and EMD22FHAT2RDKR (Digi-Reel) exist. Confirm availability status directly with authorized distributors, as supply levels fluctuate. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability for automotive or safety-critical implementations.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 250 MHz transition frequency supports moderate-speed switching applications. Verify that the 100 mA collector current limit and 150 mW power dissipation meet the thermal and load requirements of the target circuit. The fixed resistor values of 4.7 kΩ and 47 kΩ must align with the driving source impedance and desired bias currents.

Part Context

This part belongs to the EMD22 series of dual pre-biased transistors from Rohm. It shares the same internal structure and pinout as other members like the EMD22FHT2R but may differ in packaging or specific parameter tolerances. The EMT6 package allows for automated mounting, facilitating high-volume production assembly while maintaining independent transistor elements to prevent interference between the NPN and PNP sections.

Replacement Considerations

• EMD22FHT2R

FAQ

What are the specific values of the built-in resistors?

The internal base resistor R1 is 4.7 kΩ and the internal base resistor R2 is 47 kΩ.

Is this component suitable for automotive applications?

Yes, the EMD22FHAT2R is qualified according to the AEC-Q101 standard for automotive grade components.

What is the maximum power dissipation rating?

The maximum power dissipation is 150 mW.