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The EMD22T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within a compact SOT-563 (EMT6) surface-mount package. The device features built-in bias resistors with a ratio of 10, specifically R1 at 4.7 kΩ and R2 at 47 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 150 mW, with a minimum DC current gain (hFE) of 80 at 10 mA and 5 V.
Verify the specific ordering suffix to ensure correct packaging configuration, such as tape and reel quantities. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to maintain device reliability during assembly processes.
Select this component when a compact solution for complementary switching or amplification is required. The integrated bias network simplifies circuit design by eliminating external resistors. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the EMD22 series of complex digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, offering a streamlined alternative for designs needing both NPN and PNP functions in a small footprint. The EMT6 package provides efficient thermal management for low-power applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official ROHM documentation for equivalent parts within the same family or cross-reference with other manufacturers using identical pinouts and electrical specifications.