EMD22T2R

EMD22T2R

$0.49
  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:94a70ba55e54 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

Download product information

EMD22T2R

Overview

The EMD22T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within a compact SOT-563 (EMT6) surface-mount package. The device features built-in bias resistors with a ratio of 10, specifically R1 at 4.7 kΩ and R2 at 47 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 150 mW, with a minimum DC current gain (hFE) of 80 at 10 mA and 5 V.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors in a single compact package to reduce component count and board space.
  • Features a fixed resistor ratio of 10 between base and emitter resistors for standardized biasing applications.
  • Designed for high-frequency operation with a transition frequency of 250 MHz suitable for signal processing.

Applications

  • Differential amplifier circuits requiring matched transistor pairs.
  • High-frequency oscillator stages and crystal oscillators.
  • General-purpose switching and logic interface circuits.

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, such as tape and reel quantities. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to maintain device reliability during assembly processes.

Selection Notes

Select this component when a compact solution for complementary switching or amplification is required. The integrated bias network simplifies circuit design by eliminating external resistors. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the EMD22 series of complex digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, offering a streamlined alternative for designs needing both NPN and PNP functions in a small footprint. The EMT6 package provides efficient thermal management for low-power applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official ROHM documentation for equivalent parts within the same family or cross-reference with other manufacturers using identical pinouts and electrical specifications.

EMD22T2REMD22T2R
$0.49
Buy Now