EMD29T2R

Overview

The EMD29T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within an SOT-563 (EMT6) surface-mount package. The NPN section supports a collector current of 100 mA with a maximum collector-emitter voltage of 50 V, while the PNP section handles up to 500 mA at -12 V. Internal bias resistors are configured with ratios of 1:10 or 10:10. Key electrical parameters include a minimum DC current gain (hFE) of 30 for the NPN and 140 for the PNP under specified conditions. The device operates at frequencies up to 260 MHz with a power dissipation rating of 120 mW.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors in a compact six-pin surface-mount package.
• Provides high-speed switching capabilities suitable for digital logic interfacing and signal processing applications.
• Features low saturation voltage characteristics to minimize power loss during conduction states.

Applications

• Digital logic level shifting and interface circuits between microcontrollers and peripheral devices.
• High-frequency oscillator circuits and crystal driver stages requiring stable biasing.
• Differential amplifier input stages utilizing the complementary transistor pair configuration.

Procurement Notes

Verify the specific suffix designation against the manufacturer's latest datasheet to confirm resistor values and polarity configurations. Ensure compliance with RoHS directives and check for automotive qualification status if deploying in regulated environments. Confirm packaging options such as cut tape or reel quantities match production requirements.

Selection Notes

Select this component when space-constrained designs require both NPN and PNP switching elements with integrated base resistors. Compare hFE specifications and saturation voltages against circuit load requirements. Evaluate thermal performance based on the 120 mW power dissipation limit and ambient operating temperature range.

Part Context

This part belongs to the EMD29 series of complex transistors designed for general-purpose digital applications. It serves as a replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The EMT6 package offers a small footprint suitable for dense PCB layouts.

Replacement Considerations

Equivalent single-component parts include DTC114E for the NPN side and DTB513Z for the PNP side. Verify pin compatibility and electrical parameters before substituting with other dual transistor arrays from different manufacturers.