EMD30T2R

Overview

The EMD30T2R is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bipolar junction transistor within a compact SOT-563-6 surface-mount package. It features typical input resistors of 10 kOhms for the NPN unit and 1 kOhm for the PNP unit, with corresponding emitter-base resistors of 1 kOhm and 10 kOhm respectively. The device supports a maximum collector-emitter voltage of 30 V for both polarities and handles continuous collector currents of 100 mA (NPN) and -200 mA (PNP). Key electrical characteristics include a minimum DC current gain (hFE) of 30 at specified test conditions, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The component operates up to a maximum temperature of +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single ultra-small package to reduce circuit board space.
• Includes built-in internal biasing resistors to simplify driver circuit design and minimize external component count.
• Designed for high-speed switching applications with a maximum operating frequency of 250 MHz.

Applications

• Differential amplifier circuits requiring matched or complementary transistor pairs.
• High-frequency crystal oscillator drivers.
• General-purpose logic level shifting and switching interfaces.

Procurement Notes

Verify the RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement, as indicated by the 'Details' link in official specifications. Confirm that the SOT-563-6 package dimensions align with your PCB footprint requirements. Ensure that the thermal management strategy accounts for the 150 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a compact solution for both NPN and PNP switching is required without separate discrete parts. Compare the specific input resistance values (10k/1k) against other series members like EMD29 or EMD53 if different base drive characteristics are needed. Verify that the 30V voltage rating meets the system's supply requirements and that the 100mA/-200mA current capabilities are sufficient for the load.

Part Context

This part belongs to the EMD3 series of complex transistors, which are designed for use in small-signal applications ranging from differential amplifiers to high-frequency oscillators. The series is characterized by its integration of two transistors in an EMT6 (SOT-563) package, offering a space-saving alternative to discrete components for standard logic and analog switching tasks.

Replacement Considerations

Potential substitutes within the same family include EMD29T2R, which offers similar polarity but different current ratings (-500mA/-100mA), and EMD53T2R, which provides symmetric ±100mA current handling. Verify pin compatibility and electrical parameter overlaps before substitution.