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The EMD38T2R is a dual digital transistor from ROHM Semiconductor, featuring one NPN and one PNP bipolar junction transistor in a compact SOT-563-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50V and continuous collector currents of 100mA for both polarities. The device supports a maximum operating frequency of 250MHz and dissipates up to 150mW of power. Typical input resistances are 10kΩ and 1kΩ, with emitter-base voltages rated at -3V and 1.4V respectively. Output voltages are specified at 300mV.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation prior to integration. Ensure storage conditions remain within the specified temperature range to maintain device integrity. Check for any specific handling requirements related to electrostatic discharge protection during assembly processes.
Select this component when a dual NPN/PNP configuration is required in a minimal footprint. Consider the 50V voltage rating and 100mA current capacity against load requirements. Evaluate the 250MHz frequency limit for high-speed switching needs. Compare input resistance values with driving source capabilities to ensure proper biasing.
This part belongs to the EMD series of digital transistors by ROHM Semiconductor. These devices combine transistors with built-in bias resistors to reduce external component count. The EMD38T2R specifically offers a 50V rating, distinguishing it from lower-voltage variants like the EMD30T2R (30V) and higher-current options like the EMD29T2R (500mA).
The EMD30T2R serves as a similar dual digital transistor but with a lower 30V collector-emitter voltage rating. Designers must verify if the reduced voltage withstand capability meets their circuit requirements before substituting.