EMD3D256M08G1-150CBS1R

Memory IC Overview

The EMD3D256M08G1-150CBS1R is a non-volatile Spin-transfer Torque MRAM (STT-MRAM) device with a 256Mb capacity, configured as 32Mb x 8. It operates at VDD and VDDQ of 1.5V ±0.075V, supporting DDR3 speeds up to 1333MT/sec/pin (fCK up to 667MHz). The component utilizes an 8n prefetch architecture and features on-device termination (ODT) and internal ZQ calibration. It is housed in a standard 10x13mm 78-Ball BGA package.

Memory IC Feature Summary

• Non-volatile memory technology that retains data without power and eliminates the need for cell refresh cycles.
• Fully compatible with standard DDR3 SDRAM features including on-die termination and internal ZQ calibration.
• Supports high-speed operation up to 1333MT/sec/pin using an 8n prefetch architecture.
• Operates at a 1.5V supply voltage with differential clock inputs and bidirectional strobes.

Memory IC Applications

• Embedded systems requiring non-volatile memory with high endurance
• Industrial applications needing reliable data retention
• Automotive embedded designs

Memory IC Procurement Notes

Verify the specific suffix 'G1-150CBS1R' against official ordering tables, as datasheets may list base variants like EMD3D256M08BS1. Confirm lead times and availability directly with Everspin Technologies or authorized distributors, as production status can change. Ensure compatibility with JEDEC JESD79-3F standards for your specific system design requirements.

Memory IC Selection Notes

Select this component for designs requiring DDR3 interface compatibility combined with non-volatility. Consider the 78-ball BGA package constraints and thermal characteristics (Theta JA 26.4 °C/watt). Verify timing parameters such as tRC and tRAS, which differ from standard DRAM due to STT-MRAM design. Ensure power supply tracking between VDD and VDDQ within specified limits.

Memory IC Part Context

This part belongs to the EMD3D256MxxBS1 series of 256Mb DDR3 Spin-transfer Torque MRAMs manufactured by Everspin Technologies. The series includes both x8 and x16 configurations, offering high-speed access and data persistence. These devices are designed to replace traditional volatile DRAM in applications where data retention during power loss is critical.

Memory IC Replacement Considerations

Direct substitutes include other parts within the EMD3D256MxxBS1 family, such as the EMD3D256M16BS1 for x16 configurations. Cross-referencing with standard DDR3 SDRAM pinouts is necessary, but timing parameters will differ. No other specific substitute part numbers are confirmed in the provided documentation.

Memory IC FAQ

Does the EMD3D256M08G1-150CBS1R require periodic refresh cycles?

No, the device uses Spin-Torque MRAM technology, which does not require cell refresh cycles, simplifying system design.

What is the maximum operating temperature for this component?

The normal operating temperature range is 0°C to 85°C.

How is On-Die Termination (ODT) controlled?

ODT is enabled when the ODT pin is registered HIGH. It applies termination resistance to DQ, DQS, DQS#, and DM/TDQS signals.