EMD3D256M16G2-150CBS1

Memory IC Overview

The EMD3D256M16G2-150CBS1 is a 256Mb (16Mb x 16) DDR3 Spin-transfer Torque MRAM. It operates at VDD/VDDQ of 1.425V to 1.575V with speeds up to 1333MT/sec/pin. The device features an internal 8-bank architecture, on-device termination, and supports burst lengths of 8 or chopped 4. It utilizes a 96-ball BGA package and maintains data persistence without refresh cycles.

Memory IC Feature Summary

• Non-volatile memory retaining data during power loss
• Compatible with standard DDR3 SDRAM interface and commands
• High endurance write cycle capability
• On-chip DLL for clock alignment

Memory IC Applications

• System backup storage
• Industrial control systems
• Automotive electronics
• Network infrastructure equipment

Memory IC Procurement Notes

Verify the specific speed bin and package variant against the datasheet requirements. Confirm that the system design accommodates the 1.5V supply voltage and thermal characteristics. Ensure compatibility with the required DDR3 timing parameters before finalizing procurement.

Memory IC Selection Notes

Select this component when non-volatility and high-speed DDR3 performance are required. Consider the 16-bit data bus width and 96-ball BGA package constraints. Evaluate thermal management needs due to the operating temperature range and power dissipation limits specified in the datasheet.

Memory IC Part Context

This part belongs to the EMD3D256MxxBS1 series from Everspin Technologies. It represents a high-density STT-MRAM solution designed to replace traditional DRAM in applications requiring data retention. The series offers various speed grades and configurations within the 256Mb density class.

Memory IC Replacement Considerations

Direct replacements must match the 256Mb density, 16-bit width, and DDR3 interface. Verify pinout compatibility with the 96-ball BGA footprint. Check if alternative parts support the same 1333MT/sec speed grade and voltage specifications.