EMD3D256M16G2-150CBS1R

Memory IC Overview

The EMD3D256M16G2-150CBS1R is a 256Mb (16Mb x 16) DDR3 Spin-transfer Torque MRAM. It operates at VDD = 1.5V ± 0.075V with speeds up to 667MHz fCK (1333MT/sec/pin). The device features a page size of 1024 bits, on-device termination, and an On-Chip DLL for signal alignment. It utilizes a standard 96-ball BGA package.

Memory IC Feature Summary

• Non-volatile memory architecture that retains data without power
• Supports standard DDR3 SDRAM features including on-device termination
• High write cycle endurance capability
• Eliminates the need for cell refresh operations

Memory IC Applications

• Systems requiring non-volatile high-speed memory
• Applications demanding high write endurance
• DDR3 compatible embedded designs

Memory IC Procurement Notes

Verify the specific suffix 'G2' against official documentation to confirm exact speed bin or configuration details. Ensure the 'CBS1R' suffix matches the required RoHS compliance and reel packaging specifications. Cross-reference the datasheet revision to confirm timing parameters.

Memory IC Selection Notes

Select this component for designs needing DDR3 compatibility with non-volatility. The 16-bit I/O width requires a 96-ball BGA footprint. Ensure the system supports 1.5V operation and provides necessary differential clocks. Verify thermal management for the 96-ball package within the 0°C to 85°C operating range.

Memory IC Part Context

This part belongs to the Everspin EMD3D256MxxBS1 family of 256Mb STT-MRAM devices. It is designed as a drop-in replacement for standard DDR3 DRAM in systems where data persistence is critical. The technology combines the speed of synchronous memory with the retention characteristics of magnetic storage.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.