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The EMD3FHAT2R is a complex transistor array manufactured by Rohm Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single compact footprint. The device features a maximum collector-emitter voltage of 50V for both polarities and a continuous collector current rating of 100mA. Internal base resistance is specified at 10kΩ, while emitter-base resistance is 10kΩ. The unit supports a maximum power dissipation of 150mW and operates across a temperature range from -55°C to 150°C.
Verify the specific suffix 'FHAT2R' against official Rohm documentation to confirm internal resistor values and binning specifications. Ensure compatibility with standard SMT reflow profiles and check for automotive qualification status if deploying in regulated environments. Confirm RoHS compliance through the manufacturer's latest environmental declaration.
Select this component when space constraints require integrating both NPN and PNP functions with fixed biasing. Compare internal resistance values against circuit requirements to ensure proper drive characteristics. Consider the 150mW thermal limit and verify PCB layout capabilities for heat dissipation in dense assemblies.
This part belongs to Rohm's EMD series of complex transistors, which combine bipolar junction transistors with integrated resistors. The EMT6 package is a standard small-outline form factor widely used in consumer electronics. This series offers a compact alternative to discrete transistor networks, simplifying assembly and reducing board footprint.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify equivalent functionality with other dual-complex transistors in the SOT-563 package, ensuring matching voltage, current, and resistance specifications before substitution.