EMD3T2R

Overview

The EMD3T2R is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bipolar junction transistor within a compact SOT-563 (EMT6) surface-mount package. This component features built-in bias resistors to simplify circuit design by eliminating the need for external input components. Key electrical specifications include a maximum collector-emitter voltage of 50V for the NPN side and -50V for the PNP side, with continuous collector currents rated at 100mA and -100mA respectively. The device offers a minimum DC current gain (hFE) of 30 under standard test conditions and supports a transition frequency up to 250MHz. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 150mW.

Feature Summary

• Integrates complementary NPN and PNP transistors in a single ultra-small package
• Includes built-in bias resistors to reduce external component count and simplify inverter circuit configuration
• Supports high-frequency operation with a transition frequency of 250MHz
• Designed for surface-mount technology with a compact footprint

Applications

• Differential amplifier circuits
• High-frequency crystal oscillators
• Starters and switching applications

Procurement Notes

Verify the specific suffix T2R confirms the tape-and-reel packaging format containing 8000 units per reel. Confirm RoHS compliance status through official documentation before integration. Check for any obsolescence notices or lifecycle changes directly from the manufacturer. Ensure the ordering code matches the required resistance values and polarity configuration.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. Compare against single-transistor alternatives like DTA114E or DTC114E if only one polarity is needed. Verify that the 50V breakdown voltage and 100mA current ratings meet the specific load requirements of the target application circuit.

Part Context

The EMD3T2R belongs to the EMD series of complex transistors designed for general-purpose switching and amplification. It serves as a compact alternative to discrete resistor-transistor networks, reducing board space and assembly complexity. The EMT6 package provides a standardized footprint compatible with automated surface-mount placement processes.

Replacement Considerations

Direct functional equivalents may include other dual NPN/PNP digital transistors in SOT-563 packages from various manufacturers. Verify pinout compatibility and electrical parameter margins before substitution. Single-transistor replacements require additional external biasing resistors.