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Product Detailed Parameters
- Description：TRANS PREBIAS NPN/PNP 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms, 10kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The EMD4DXV6T1G is a dual complementary digital transistor (BRT) from onsemi, integrating one NPN and one PNP bipolar junction transistor with monolithic biasing networks in a single SOT-563 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA for both polarities. The device includes typical input resistors of 10 kΩ with a resistor ratio of 0.21. Power dissipation is rated at 500 mW, and the unit operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates complementary NPN and PNP transistors with pre-biased resistor networks to reduce component count and PCB space.
- Provides high DC current gain with a minimum hFE of 80 for simplified switching applications.
- Supports surface-mount installation in a compact six-pin SOT-563 footprint.
Applications
- General-purpose switching circuits requiring complementary logic levels
- Driver stages for low-power loads in consumer electronics
- Interface circuits between microcontrollers and peripheral devices
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure the selected variant matches the required resistor values and thermal characteristics for the target application environment.
Selection Notes
Select this component when a complementary pair of pre-biased transistors is needed in a minimal footprint. Compare the 10 kΩ input resistance and 0.21 resistor ratio against circuit requirements to ensure proper biasing. Confirm that the 50 V voltage rating and 100 mA current capacity exceed the maximum expected load conditions.
Part Context
This part belongs to the EMD4DXV6 series of dual complementary digital transistors. It shares the same package and electrical ratings as variants like EMD4DXV6T5G but may differ in packaging configuration or specific manufacturing lot details defined by the suffix.
Replacement Considerations
Direct substitutes include other onsemi dual complementary BRTs in SOT-563 packages such as EMD4DXV6T5G. Verify equivalent voltage, current, and resistor ratios before substitution.
