EMD4DXV6T5

EMD4DXV6T5

$0.04
  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-

SKU:f1e251e201b4 Category: Brand:

  
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Product Detailed Parameters

  • Description:SMALL SIGNAL BIPOLAR TRANSISTOR
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:357mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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EMD4DXV6T5

Overview

The EMD4DXV6T5 is a dual bias resistor transistor (BRT) from onsemi, featuring one NPN and one PNP digital transistor in a single SOT-563 surface-mount package. It integrates base resistors to simplify circuit design by reducing component count and board space. The device operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA. With a power dissipation rating of 500mW, it is suitable for low-power switching applications requiring complementary logic control.

Feature Summary

  • Combines NPN and PNP transistors with integrated base resistors in a compact dual configuration
  • Simplifies circuit design by eliminating external base resistors and reducing footprint
  • Provides complementary switching capability within a single surface-mount package

Applications

  • General-purpose switching circuits requiring complementary logic levels
  • Interface circuits between microcontrollers and peripheral devices
  • Level shifting applications in low-voltage digital systems

Procurement Notes

Verify the exact ordering part number against the manufacturer's official datasheet to ensure correct suffix designation. Confirm that the SOT-563 package type matches your PCB layout requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the supplier provides traceable documentation matching the specific batch code.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is needed in a minimal footprint. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the thermal performance given the 500mW power dissipation limit in the small SOT-563 package. Compare alternative BRT packages if higher current or voltage ratings are necessary.

Part Context

This device belongs to onsemi's family of pre-biased dual complementary digital transistors. It shares functional similarities with variants like EMD4DXV6T1G but differs in packaging or tape-and-reel specifications. These components are designed to replace discrete resistor-transistor networks in modern electronics where space efficiency is critical.

Replacement Considerations

Check for direct equivalents such as EMD4DXV6T1G or EMD4DXV6T5G which may offer identical electrical characteristics. Verify pin compatibility and package dimensions before substitution. Ensure the replacement maintains the same NPN/PNP configuration and integrated resistor values.

EMD4DXV6T5EMD4DXV6T5
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