EMD4DXV6T5G

Overview

The EMD4DXV6T5G is a dual complementary digital transistor from onsemi, integrating one NPN and one PNP bias resistor transistor (BRT) in a single SOT-563 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor with a typical value of 10 kΩ and a resistance ratio of 0.21. Minimum DC current gain (hFE) is specified at 80. Power dissipation reaches 500 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Integrates NPN and PNP transistors with monolithic biasing networks to replace discrete components
• Provides high current gain for efficient switching applications
• Operates reliably across extended industrial temperature ranges

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Level shifting between different voltage domains

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeits. Confirm RoHS compliance status via official documentation before integration. Check for end-of-life notifications or production discontinuance updates from the manufacturer to ensure long-term supply stability for the design.

Selection Notes

Select this part when space constraints require combining two transistors and their bias resistors into one footprint. Ensure the 10 kΩ input resistance matches the driving source impedance requirements. Verify that the 50 V rating exceeds the maximum circuit voltage spikes to prevent breakdown during operation.

Part Context

This component belongs to the EMD4DXV6 series of dual complementary digital transistors. It shares the same internal architecture as other variants in the family but differs in packaging or specific resistance values. The SOT-563 form factor allows for compact surface-mount assembly compared to discrete solutions.

Replacement Considerations

EMD4DXV6T1G serves as a tape-and-reel alternative within the same series. Cross-reference electrical parameters carefully when substituting with other BRT families to ensure pin compatibility and equivalent voltage ratings.