EMD4T2R

EMD4T2R

$0.44
  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:6957e584eaa2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms, 10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMD4T2R

Overview

The EMD4T2R is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP transistor within a single SOT-563 (EMT6) package. It features a supply voltage of ±50V and a collector current of ±100mA. The NPN section includes a 1kΩ input resistor and a 47kΩ emitter-base resistor, while the PNP section utilizes a 10kΩ input resistor and a 47kΩ emitter-base resistor. With a power dissipation of 150mW and a maximum operating temperature of 150°C, this component is designed for surface mount applications.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a compact six-terminal package
  • Includes built-in bias resistors to simplify circuit design and reduce component count
  • Supports high-frequency operation up to 250 MHz for signal processing tasks

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillator drivers
  • General-purpose switching and logic interface applications

Procurement Notes

Verify the specific ordering suffix 'T2R' confirms the tape-and-reel packaging format containing 8000 units per reel. Confirm RoHS compliance status through official documentation before integration. Ensure the selected variant matches the required resistor ratios for the intended NPN and PNP channels.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. Compare input resistance values against circuit requirements, noting the asymmetrical 1kΩ/10kΩ configuration between the NPN and PNP sections. Verify that the ±50V rating and 150mW thermal dissipation meet the system's electrical and thermal boundaries.

Part Context

This part belongs to the EMD series of complex digital transistors manufactured by ROHM Semiconductor. These devices are engineered to replace multiple discrete components, offering a standardized footprint for mixed-signal designs. The T2R suffix specifically denotes the taping packaging method used for automated surface-mount assembly processes.

Replacement Considerations

Official equivalent single-part references include DTA114Y for the NPN channel and DTC144E for the PNP channel. Direct pin-to-pin replacements within the same family should be verified against specific resistor tolerance and gain specifications.

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