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The EMD53T2R is a dual digital transistor from ROHM Semiconductor, integrating an NPN and a PNP transistor within a single SOT-563-6 surface-mount package. It features built-in bias resistors with a typical input resistance of 10 kOhms and a ratio of 1. The device supports a maximum operating frequency of 250 MHz and handles continuous collector currents of ±100 mA. Key electrical limits include a collector-emitter voltage (VCEO) of ±150 mV, power dissipation of 150 mW, and an emitter-base voltage (VEBO) of ±2.6 V. Designed for high reliability, it operates at temperatures up to +150°C and offers a minimum DC current gain (hfe) of 35.
Verify the specific ordering suffix 'T2R' to confirm the reel packaging format containing 8000 units per factory pack. Ensure compatibility with SMT assembly processes requiring SOT-563-6 footprints. Confirm RoHS compliance status through official manufacturer documentation prior to integration into regulated products.
Select this component when a complementary NPN/PNP pair with matched 10 kOhm bias resistors is required in a minimal footprint. Consider the ±150 mV VCEO limit carefully, as it differs significantly from standard discrete transistors. Verify that the 150 mW power dissipation rating suffices for the intended thermal environment and duty cycle.
This part belongs to the EMD series of complex digital transistors manufactured by ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The EMD53 variant specifically targets applications requiring balanced NPN and PNP switching characteristics with standardized resistor values.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation or distributor cross-reference tools for verified equivalents before substitution.